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Writing and erasing mechanisms of stable nonvoltarile memory devices based on SnO2 nanoparticle/polystrene nanocomposites

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dc.contributor.author김태환-
dc.date.accessioned2021-08-03T12:21:30Z-
dc.date.available2021-08-03T12:21:30Z-
dc.date.created2021-06-30-
dc.date.issued2013-06-29-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/47625-
dc.publisherChemical and Biological Detection Research Center at Sungkyunkwan University (SKKU)-
dc.titleWriting and erasing mechanisms of stable nonvoltarile memory devices based on SnO2 nanoparticle/polystrene nanocomposites-
dc.typeConference-
dc.contributor.affiliatedAuthor김태환-
dc.identifier.bibliographicCitation2013 International Forum on Functional Materials (IFFM 2013)-
dc.relation.isPartOf2013 International Forum on Functional Materials (IFFM 2013)-
dc.citation.title2013 International Forum on Functional Materials (IFFM 2013)-
dc.citation.conferencePlaceRamada Plaza Jeju Hotel, Jeju, Korea-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers

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