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Strain and Hole Confinement Effect on Memory Margin of Capacitor-less Memory-cell Fabricated on Strained Si on Relaxed SiGe Layer-on-Insulator
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-03T13:18:30Z | - |
| dc.date.available | 2021-08-03T13:18:30Z | - |
| dc.date.issued | 2013-04-04 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/48796 | - |
| dc.title | Strain and Hole Confinement Effect on Memory Margin of Capacitor-less Memory-cell Fabricated on Strained Si on Relaxed SiGe Layer-on-Insulator | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2013 MRS Spring Meeting | - |
| dc.citation.conferencePlace | Moscone West | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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