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Poly-GaAs 채널을 갖는 3D NAND flash memory 전기적 특성 연구
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 한성종 | - |
| dc.contributor.author | 오영택 | - |
| dc.contributor.author | 송윤흡 | - |
| dc.date.accessioned | 2021-07-30T05:26:14Z | - |
| dc.date.available | 2021-07-30T05:26:14Z | - |
| dc.date.created | 2021-05-14 | - |
| dc.date.issued | 2016-11 | - |
| dc.identifier.issn | 12296368 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/4884 | - |
| dc.description.abstract | In this paper, we investigated the threshold voltage (VT) dispersion and on-current in poly-GaAs used for a channel material in 3D NAND flash memory. Using simulation, stings of NAND flash memory with 12, 24, 36, and 48 cells were implemented and electrical properties were extracted. It is revealed that the on-current in poly-GaAs channel is larger than in poly-Si channel due to the difference in mobility. In addition, the VT dispersion tends to decrease as the numbers of stacked layers increase in case of poly-GaAs channel. | - |
| dc.language | 한국어 | - |
| dc.language.iso | ko | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | Poly-GaAs 채널을 갖는 3D NAND flash memory 전기적 특성 연구 | - |
| dc.title.alternative | A investigation on electrical properties of poly-GaAs channel in 3D NAND flash memory | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | 송윤흡 | - |
| dc.identifier.bibliographicCitation | 대한전자공학회 학술대회, pp.219 - 222 | - |
| dc.relation.isPartOf | 대한전자공학회 학술대회 | - |
| dc.citation.title | 대한전자공학회 학술대회 | - |
| dc.citation.startPage | 219 | - |
| dc.citation.endPage | 222 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Proceeding | - |
| dc.description.journalClass | 3 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | other | - |
| dc.identifier.url | https://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE07071419 | - |
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)