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The effects of Al2O3 passivation with HfO2 as a buffer layer on a-IGZO TFTs

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dc.contributor.author전형탁-
dc.date.accessioned2021-08-03T13:37:26Z-
dc.date.available2021-08-03T13:37:26Z-
dc.date.issued2012-11-09-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/49663-
dc.titleThe effects of Al2O3 passivation with HfO2 as a buffer layer on a-IGZO TFTs-
dc.typeConference-
dc.citation.conferenceName추계재료학회-
dc.citation.conferencePlace한국-
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서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers

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