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Resistive switching characteristics of AL2O3/TiO2 bilayer ReRAM dependent on Al2O3 Thickness
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-03T13:50:29Z | - |
| dc.date.available | 2021-08-03T13:50:29Z | - |
| dc.date.issued | 2012-10-31 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/49961 | - |
| dc.title | Resistive switching characteristics of AL2O3/TiO2 bilayer ReRAM dependent on Al2O3 Thickness | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | AVS 59th International Symposium & Exhibition | - |
| dc.citation.conferencePlace | Tampa, Florida, USA | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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