Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shuang, Y. | - |
dc.contributor.author | Sutou, Y. | - |
dc.contributor.author | Hatayama, S. | - |
dc.contributor.author | Shindo, S. | - |
dc.contributor.author | Song, Yun Heub | - |
dc.contributor.author | Ando, D. | - |
dc.contributor.author | Koike, J. | - |
dc.date.accessioned | 2021-07-30T05:31:43Z | - |
dc.date.available | 2021-07-30T05:31:43Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-04 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/5311 | - |
dc.description.abstract | Phase-change random access memory (PCRAM) is enabled by a large resistance contrast between amorphous and crystalline phases upon reversible switching between the two states. Thus, great efforts have been devoted to identifying potential phase-change materials (PCMs) with large electrical contrast to realize a more accurate reading operation. In contrast, although the truly dominant resistance in a scaled PCRAM cell is contact resistance, less attention has been paid toward the investigation of the contact property between PCMs and electrode metals. This study aims to propose a non-bulk-resistance-dominant PCRAM whose resistance is modulated only by contact. The contact-resistance-dominated PCM exploited here is N-doped Cr2Ge2Te6 (NCrGT), which exhibits almost no electrical resistivity difference between the two phases but exhibits a typical switching behavior involving a three-order-of-magnitude SET/RESET resistance ratio owing to its large contact resistance contrast. The conduction mechanism was discussed on the basis of current-voltage characteristics of the interface between the NCrGT and the W electrode. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yun Heub | - |
dc.identifier.doi | 10.1063/1.5029327 | - |
dc.identifier.scopusid | 2-s2.0-85046640457 | - |
dc.identifier.wosid | 000431452900047 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.112, no.18 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 112 | - |
dc.citation.number | 18 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics | - |
dc.relation.journalWebOfScienceCategory | Applied | - |
dc.subject.keywordPlus | GE2SB2TE5 FILMS | - |
dc.subject.keywordPlus | DATA-STORAGE | - |
dc.identifier.url | https://pubs.aip.org/aip/apl/article/112/18/183504/35255/Contact-resistance-change-memory-using-N-doped | - |
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