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Electrical bistabilities and stability characteristics of nonvolatile memory devices fabricated utilizing organic composites of poly(3-hexylthiophene) and polymethylmethacrylate

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dc.contributor.author김태환-
dc.date.accessioned2021-08-03T16:19:06Z-
dc.date.available2021-08-03T16:19:06Z-
dc.date.created2021-06-30-
dc.date.issued2011-11-11-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/53304-
dc.publisherInternational Association of Computer Science and Information Technology (IACSIT)-
dc.titleElectrical bistabilities and stability characteristics of nonvolatile memory devices fabricated utilizing organic composites of poly(3-hexylthiophene) and polymethylmethacrylate-
dc.typeConference-
dc.contributor.affiliatedAuthor김태환-
dc.identifier.bibliographicCitationInternational Conference On Nano Science and Nano Technology (ICNST2011)-
dc.relation.isPartOfInternational Conference On Nano Science and Nano Technology (ICNST2011)-
dc.citation.titleInternational Conference On Nano Science and Nano Technology (ICNST2011)-
dc.citation.conferencePlace70th Memorial Hall & Museum Hall, Sunchon National University,Korea-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers

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