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Memory mechanism of nonvolatile memory devices fabricated utilizing CuInS2 quantum dots embedded in a graphene oxide layer

Authors
김태환
Issue Date
11-Nov-2011
Publisher
International Association of Computer Science and Information Technology (IACSIT)
Citation
International Conference On Nano Science and Nano Technology (ICNST2011)
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/53307
Conference Name
International Conference On Nano Science and Nano Technology (ICNST2011)
Place
Sunchon National University,Korea
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서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers

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