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Four-level memory characteristics of Nonvolatile Memory-cell Embedded with Fe Nanocrystals Surrounded with FeO and Fe2O3 Tunneling Barrier
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-03T16:32:42Z | - |
| dc.date.available | 2021-08-03T16:32:42Z | - |
| dc.date.issued | 2011-10-28 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/53681 | - |
| dc.title | Four-level memory characteristics of Nonvolatile Memory-cell Embedded with Fe Nanocrystals Surrounded with FeO and Fe2O3 Tunneling Barrier | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2011 한국재료학회 춘계학술발표대회 및 제 21회 신소재 심포지엄 | - |
| dc.citation.conferencePlace | 신라대학교 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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