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Ion Beam Etching of sub-30 nm Scale Magnetic Tunnel Junctions for Spin Transfer Torque Magnetic Random Access Memory Application
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이승백 | - |
| dc.date.accessioned | 2021-08-03T16:51:47Z | - |
| dc.date.available | 2021-08-03T16:51:47Z | - |
| dc.date.issued | 2011-08-24 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/54513 | - |
| dc.title | Ion Beam Etching of sub-30 nm Scale Magnetic Tunnel Junctions for Spin Transfer Torque Magnetic Random Access Memory Application | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Nano Korea Symposium 2011 | - |
| dc.citation.conferencePlace | 일산 Kintex | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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- Lee, Seung Beck
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)