The effects of RF plasma power on Al2O3 films deposited at room-temperature (25C) by remote plasma atomic layer deposition (RPALD)
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2021-08-03T16:51:54Z | - |
dc.date.available | 2021-08-03T16:51:54Z | - |
dc.date.issued | 20110824 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/54522 | - |
dc.title | The effects of RF plasma power on Al2O3 films deposited at room-temperature (25C) by remote plasma atomic layer deposition (RPALD) | - |
dc.type | Conference | - |
dc.citation.conferenceName | Nano Korea 2011 | - |
dc.citation.conferencePlace | 킨텍스 | - |
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