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Growth of a-plane GaN layer on annealed off-axis r-plane sapphire substrate by metal organic chemical vapor deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박진섭 | - |
| dc.date.accessioned | 2021-08-03T17:18:36Z | - |
| dc.date.available | 2021-08-03T17:18:36Z | - |
| dc.date.issued | 2011-07-11 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/54758 | - |
| dc.title | Growth of a-plane GaN layer on annealed off-axis r-plane sapphire substrate by metal organic chemical vapor deposition | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 9th International Conference on Nitride Semiconductors | - |
| dc.citation.conferencePlace | Glasgow, UK | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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- Park, Jinsub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)