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Electrical characterization of resistive switching memory for metaloxide nanocrystals embedded in ZnO and polyimide layer

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dc.contributor.author김은규-
dc.date.accessioned2021-08-03T17:18:44Z-
dc.date.available2021-08-03T17:18:44Z-
dc.date.created2021-06-30-
dc.date.issued2011-07-08-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/54771-
dc.publisherThe Korean Physical Society-
dc.titleElectrical characterization of resistive switching memory for metaloxide nanocrystals embedded in ZnO and polyimide layer-
dc.typeConference-
dc.contributor.affiliatedAuthor김은규-
dc.identifier.bibliographicCitation15th Inter. Symp. on Phys. of Semicond. and Appl.-
dc.relation.isPartOf15th Inter. Symp. on Phys. of Semicond. and Appl.-
dc.citation.title15th Inter. Symp. on Phys. of Semicond. and Appl.-
dc.citation.conferencePlaceJeju-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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