Long retention property of WSi2 nanocrystal nonvolatile transistor including barrier engineered high-k tunnel layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2021-08-03T17:19:04Z | - |
dc.date.available | 2021-08-03T17:19:04Z | - |
dc.date.created | 2021-06-30 | - |
dc.date.issued | 2011-07-06 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/54801 | - |
dc.publisher | The Korean Physical Society | - |
dc.title | Long retention property of WSi2 nanocrystal nonvolatile transistor including barrier engineered high-k tunnel layer | - |
dc.type | Conference | - |
dc.contributor.affiliatedAuthor | 김은규 | - |
dc.identifier.bibliographicCitation | 15th Inter. Symp. on Phys. of Semicond. and Appl. | - |
dc.relation.isPartOf | 15th Inter. Symp. on Phys. of Semicond. and Appl. | - |
dc.citation.title | 15th Inter. Symp. on Phys. of Semicond. and Appl. | - |
dc.citation.conferencePlace | Jeju | - |
dc.type.rims | CONF | - |
dc.description.journalClass | 1 | - |
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