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Energetics of Graphene Structure Formation on 3C-SiC(111) Surface by Epitaxial Growth Process: A Molecular Dynamics Study

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dc.contributor.author정용재-
dc.date.accessioned2021-08-03T18:18:05Z-
dc.date.available2021-08-03T18:18:05Z-
dc.date.created2021-06-30-
dc.date.issued2011-01-20-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/56202-
dc.publisherThe Japan Society of Applied Physics-
dc.titleEnergetics of Graphene Structure Formation on 3C-SiC(111) Surface by Epitaxial Growth Process: A Molecular Dynamics Study-
dc.typeConference-
dc.contributor.affiliatedAuthor정용재-
dc.identifier.bibliographicCitationIWDTF 2011-
dc.relation.isPartOfIWDTF 2011-
dc.citation.titleIWDTF 2011-
dc.citation.conferencePlaceTokyo-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers

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