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Direct patterning of conductive carbon nanotube/polystyrene sulfonate composites via electrohydrodynamic jet printing for use in organic field-effect transistors

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dc.contributor.authorJeong, Yong Jin-
dc.contributor.authorLee, Xinlin-
dc.contributor.authorBae, Jaehyun-
dc.contributor.authorJang, Jaeyoung-
dc.contributor.authorJoo, Sang Woo-
dc.contributor.authorLim, Sooman-
dc.contributor.authorKim, Se Hyun-
dc.contributor.authorPark, Chan Eon-
dc.date.accessioned2021-07-30T05:35:41Z-
dc.date.available2021-07-30T05:35:41Z-
dc.date.issued2016-04-
dc.identifier.issn2050-7526-
dc.identifier.issn2050-7534-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/5622-
dc.description.abstractCarbon-based conductive lines were directly patterned using an electrohydrodynamic (EHD) jet printing technique. We successfully dispersed multiwalled carbon nanotubes (MWCNTs) in a polar solvent through a size-sorting and blending process involving polystyrene sulfonate (PSS), and we fabricated a homogeneous MWCNT/PSS nano-composite ink for EHD printing. We demonstrated that EHD printing was affected by the type of solvent, which adjusted the surface tension of the MWCNT/PSS ink. Ethanol, with a lower surface tension compared to water, provided four different jetting modes, depending on the applied voltage and working distance. EHD-printed MWCNT/PSS conductive lines were used as source/drain (S/D) electrodes in organic field-effect transistors (OFETs). The resulting OFETs showed reliable performance with negligible hysteresis on chlorosilane-terminated polystyrene (PS-brush)-modified substrates.-
dc.format.extent8-
dc.language영어-
dc.language.isoENG-
dc.publisherRoyal Society of Chemistry-
dc.titleDirect patterning of conductive carbon nanotube/polystyrene sulfonate composites via electrohydrodynamic jet printing for use in organic field-effect transistors-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1039/c6tc01371f-
dc.identifier.scopusid2-s2.0-84973443746-
dc.identifier.wosid000378566400009-
dc.identifier.bibliographicCitationJournal of Materials Chemistry C, v.4, no.22, pp 4912 - 4919-
dc.citation.titleJournal of Materials Chemistry C-
dc.citation.volume4-
dc.citation.number22-
dc.citation.startPage4912-
dc.citation.endPage4919-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusIMPROVING PERFORMANCE-
dc.subject.keywordPlusSILVER NANOWIRES-
dc.subject.keywordPlusGATE DIELECTRICS-
dc.subject.keywordPlusNANOTUBE-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusPENTACENE-
dc.subject.keywordPlusEVAPORATION-
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