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Dependences of Electrical Properties on the Shape of the Recess Field in the Nanoscale Tantalum Nitride-Aluminium Oxide-Silicon nitride-Silicon Oxide-Silicon Memory Devices
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태환 | - |
| dc.date.accessioned | 2021-08-03T18:33:52Z | - |
| dc.date.available | 2021-08-03T18:33:52Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2010-11-08 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/56775 | - |
| dc.publisher | Gwanju-Jeonnam Nano Technlolgy Union | - |
| dc.title | Dependences of Electrical Properties on the Shape of the Recess Field in the Nanoscale Tantalum Nitride-Aluminium Oxide-Silicon nitride-Silicon Oxide-Silicon Memory Devices | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김태환 | - |
| dc.identifier.bibliographicCitation | International Conference On Nano Science and Nano Technology (ICNST2010) | - |
| dc.relation.isPartOf | International Conference On Nano Science and Nano Technology (ICNST2010) | - |
| dc.citation.title | International Conference On Nano Science and Nano Technology (ICNST2010) | - |
| dc.citation.conferencePlace | Oryonghall, Gwangu Institute of Science And Technology(GIST), Gwangu ,Korea | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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