Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Simulation of Recuced Charge Interference In 3-D Vertical Gate NAND Flash Memory
- Authors
- 이승백
- Issue Date
- 25-Sep-2010
- Place
- Beijing, China
- Conference Name
- 2010 IEEE International Conference on Network Intrastructure and Digitalcontent (IEEE IC-NIDC 2010)
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Lee, Seung Beck
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)