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Enhanced near-band edge emission from facet-controlled, epitaxially grown one-dimensional GaN nanostructures
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 백운규 | - |
| dc.date.accessioned | 2021-08-03T19:20:12Z | - |
| dc.date.available | 2021-08-03T19:20:12Z | - |
| dc.date.issued | 2010-08-26 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/57888 | - |
| dc.title | Enhanced near-band edge emission from facet-controlled, epitaxially grown one-dimensional GaN nanostructures | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | IUMRS-ICEM 2010 | - |
| dc.citation.conferencePlace | KINTEX,KOREA | - |
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Collections - 서울 공과대학 > 서울 에너지공학과 > 2. Conference Papers
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Related Researcher
- Paik, Ungyu
- COLLEGE OF ENGINEERING (DEPARTMENT OF ENERGY ENGINEERING)