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Oganic-inorganic Nanohybrid Nonvolatile Memory Using ZnO:Cu Charge Trap Layer

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dc.contributor.author성명모-
dc.date.accessioned2021-08-03T19:21:15Z-
dc.date.available2021-08-03T19:21:15Z-
dc.date.created2021-06-30-
dc.date.issued2010-08-20-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/57981-
dc.publisherMinistry of Education, Science and Technology of Korea Ministry of Knowledge Economy of Korea-
dc.titleOganic-inorganic Nanohybrid Nonvolatile Memory Using ZnO:Cu Charge Trap Layer-
dc.typeConference-
dc.contributor.affiliatedAuthor성명모-
dc.identifier.bibliographicCitationIEEE NANO 2010 10th IEEE International Conference on Nanotechnology Joint Symposium with NANO KOREA-
dc.relation.isPartOfIEEE NANO 2010 10th IEEE International Conference on Nanotechnology Joint Symposium with NANO KOREA-
dc.citation.titleIEEE NANO 2010 10th IEEE International Conference on Nanotechnology Joint Symposium with NANO KOREA-
dc.citation.conferencePlaceKINTEX-
dc.type.rimsCONF-
dc.description.journalClass1-
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