Oganic-inorganic Nanohybrid Nonvolatile Memory Using ZnO:Cu Charge Trap Layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 성명모 | - |
dc.date.accessioned | 2021-08-03T19:21:15Z | - |
dc.date.available | 2021-08-03T19:21:15Z | - |
dc.date.created | 2021-06-30 | - |
dc.date.issued | 2010-08-20 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/57981 | - |
dc.publisher | Ministry of Education, Science and Technology of Korea Ministry of Knowledge Economy of Korea | - |
dc.title | Oganic-inorganic Nanohybrid Nonvolatile Memory Using ZnO:Cu Charge Trap Layer | - |
dc.type | Conference | - |
dc.contributor.affiliatedAuthor | 성명모 | - |
dc.identifier.bibliographicCitation | IEEE NANO 2010 10th IEEE International Conference on Nanotechnology Joint Symposium with NANO KOREA | - |
dc.relation.isPartOf | IEEE NANO 2010 10th IEEE International Conference on Nanotechnology Joint Symposium with NANO KOREA | - |
dc.citation.title | IEEE NANO 2010 10th IEEE International Conference on Nanotechnology Joint Symposium with NANO KOREA | - |
dc.citation.conferencePlace | KINTEX | - |
dc.type.rims | CONF | - |
dc.description.journalClass | 1 | - |
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