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Effect of N2, Ar and O2 remote plasma treatments on Surface properties of Si substrate
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-03T19:22:34Z | - |
| dc.date.available | 2021-08-03T19:22:34Z | - |
| dc.date.issued | 2010-07-29 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/58096 | - |
| dc.title | Effect of N2, Ar and O2 remote plasma treatments on Surface properties of Si substrate | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 30th International Conference on the Physics of Semiconductors(ICPS2010) | - |
| dc.citation.conferencePlace | Coex, Seoul, Korea | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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