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Influence of growth parameters on structural anisotropy of epitaxial a-plane GaN films
- Authors
- 김은규
- Issue Date
- 26-Jul-2010
- Publisher
- Korean Physical Society
- Citation
- 30th Inter. Conf. on Physics of Semiconductors
- Conference Name
- 30th Inter. Conf. on Physics of Semiconductors
- Place
- Seoul, Korea
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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