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Dependence of Memory Margin on Interface Trap Density in the Cap-less Memory Cell

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dc.contributor.author박재근-
dc.date.accessioned2021-08-03T19:51:29Z-
dc.date.available2021-08-03T19:51:29Z-
dc.date.issued2010-04-26-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/58978-
dc.titleDependence of Memory Margin on Interface Trap Density in the Cap-less Memory Cell-
dc.typeConference-
dc.citation.conferenceName2010 ECS 217th Meeting-
dc.citation.conferencePlaceCanada/ Vancouver Fairmont Hotel Vancouver & Hyatt-
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서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers

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