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Electrical characterization of transparent memory device with metal-oxide quantum dots embedded in polyimide layer
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김영호 | - |
| dc.date.accessioned | 2021-08-03T19:51:30Z | - |
| dc.date.available | 2021-08-03T19:51:30Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2010-04-26 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/58979 | - |
| dc.publisher | the IOP Semiconductor Group | - |
| dc.title | Electrical characterization of transparent memory device with metal-oxide quantum dots embedded in polyimide layer | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김영호 | - |
| dc.identifier.bibliographicCitation | Quantum Dot 2010 | - |
| dc.relation.isPartOf | Quantum Dot 2010 | - |
| dc.citation.title | Quantum Dot 2010 | - |
| dc.citation.conferencePlace | East Midlands Conference Centre, Nottingham, UK | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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