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Effective Oxidation Methods in Improving Surface Roughness to Form Relaxed SiGe Layer-on-insulator Substrate
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-03T19:52:29Z | - |
| dc.date.available | 2021-08-03T19:52:29Z | - |
| dc.date.issued | 2010-04-23 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/59064 | - |
| dc.title | Effective Oxidation Methods in Improving Surface Roughness to Form Relaxed SiGe Layer-on-insulator Substrate | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2010년 한국물리학회 봄 학술논문발표회 및 제 86회 정기총회 | - |
| dc.citation.conferencePlace | 대전컨벤션센터 | - |
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