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원자층 증착법을 이용하여 형성한 Al2O3 유전체를 이용한 Indium Gallium Zinc Oxide 박막 트랜지스터의 특성
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-03T20:37:46Z | - |
| dc.date.available | 2021-08-03T20:37:46Z | - |
| dc.date.issued | 20091112 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/60097 | - |
| dc.title | 원자층 증착법을 이용하여 형성한 Al2O3 유전체를 이용한 Indium Gallium Zinc Oxide 박막 트랜지스터의 특성 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2009년도 추계 학술대회 | - |
| dc.citation.conferencePlace | 서울산업대학교 서울테크노파크 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Jeon, Hyeongtag
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)