Large-Area Fabrication of Patterned ZnO-Nanowire Arrays Using Light Stamping Lithography
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 성명모 | - |
dc.date.accessioned | 2021-08-03T20:49:15Z | - |
dc.date.available | 2021-08-03T20:49:15Z | - |
dc.date.created | 2021-06-30 | - |
dc.date.issued | 2009-10-30 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/60285 | - |
dc.description.abstract | We demonstrate selective adsorption and alignment of ZnO nanowires on patterned poly (dimethylsiloxane) (PDMS) thin layers with aminopropylsiloxane self-assembled monolayers (SAMs). Light stamping lithography (LSL) was used to prepare patterned PDMS thin layers as neutral passivation regions on Si substrates. 3-Aminopropyltriethoxysilane-based SAMs were selectively formed only on regions exposing the silanol groups of the Si substrates. The patterned positively charged amino groups define and direct the selective adsorption of ZnO nanowires with negative surface charges in the protonic solvent. This procedure can be adopted in automated printing machines that generate patterned ZnOnanowires arrays on large-area substrates. To demonstrate its usefulness, the LSL method was applied to prepare ZnO-nanowire transistor arrays on 4" Si wafers. | - |
dc.publisher | 대한화학회 | - |
dc.title | Large-Area Fabrication of Patterned ZnO-Nanowire Arrays Using Light Stamping Lithography | - |
dc.type | Conference | - |
dc.contributor.affiliatedAuthor | 성명모 | - |
dc.identifier.bibliographicCitation | 대한화학회 제104회 총회 및 학술발표회 | - |
dc.relation.isPartOf | 대한화학회 제104회 총회 및 학술발표회 | - |
dc.citation.title | 대한화학회 제104회 총회 및 학술발표회 | - |
dc.citation.conferencePlace | 대전컨벤션센터 | - |
dc.type.rims | CONF | - |
dc.description.journalClass | 2 | - |
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