Inorganic Thin Film Transfer Printing Using Atomic Layer Deposition

Abstract

We report a new approach to fabricate the periodic channel of metal oxide film by using the watermediated TFTP combined with atomic layer deposition (ALD). In the patterning method, the Al2O3 film is deposited on FTS-based SAMs by using ALD at growth temperature of 100�C. The CF3-terminated alkylsiloxane monolayer, which is coated on PDMS stamp, provides a weak adhesion between the deposited Al2O3 and stamp, and promotes the easy and complete release of Al2O3 film from the stamp. And also, the water layer serves as an adhesion layer to provide good conformal contact and form strong covalent bonding between the Al2O3 layer and Si substrate. Therefore, the transferred Al2O3 channel patterns chemically bound to the substrate surface and thus exhibit strong adhesion. We foresee that this approach could become a framework for fabricating nanochannels of various inorganic materials.