Growth of Branched Multi-Wall Carbon Nanotubes on Silicon Oxide Nanowires

Abstract

Carbon nanotubes CNTs were grown using plasma-enhanced chemical vapor deposition on silicon oxide nanowires SiOxNWs to construct one-dimensional hierarchical heterostructures. To grow the CNTs on the SiOxNWs, the nanowire surface was decorated with Ni seed particles by direct physical deposition. The nanosized Ni seed particles allowed the CNTs to nucleate on the nanowire surface. Scanning- and transmission electron microscopy verified that branches of CNTs project from the SiOxNWs throughout the entire length of the individual SiOxNWs. The initial Ni seed size can be used as one of the process parameters to control the CNT length and density on the nanowire surface.