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Analysis of External and Internal Fields Dependent Properties in Polar and Nonpolar InGaN/GaN Quantum Wells

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dc.contributor.author김은규-
dc.date.accessioned2021-08-03T20:53:04Z-
dc.date.available2021-08-03T20:53:04Z-
dc.date.created2021-06-30-
dc.date.issued2009-10-19-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/60608-
dc.publisherSociety of LED and Solid State Light-
dc.titleAnalysis of External and Internal Fields Dependent Properties in Polar and Nonpolar InGaN/GaN Quantum Wells-
dc.typeConference-
dc.contributor.affiliatedAuthor김은규-
dc.identifier.bibliographicCitation8th Inter. Conf. on Nitride Semiconductors-
dc.relation.isPartOf8th Inter. Conf. on Nitride Semiconductors-
dc.citation.title8th Inter. Conf. on Nitride Semiconductors-
dc.citation.conferencePlaceJeju, Korea-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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