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Atomic Relaxation and Electronic Structure Investigation of Eu2+ doped β-SiAlON: Ab Initio Calculations

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dc.contributor.author정용재-
dc.date.accessioned2021-08-03T21:21:35Z-
dc.date.available2021-08-03T21:21:35Z-
dc.date.created2021-06-30-
dc.date.issued2009-09-09-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/60989-
dc.publisherInstitute of Physics (IOP, VAST)-
dc.titleAtomic Relaxation and Electronic Structure Investigation of Eu2+ doped β-SiAlON: Ab Initio Calculations-
dc.typeConference-
dc.contributor.affiliatedAuthor정용재-
dc.identifier.bibliographicCitationThe 5th Conference of Asian Consortium on Computational Materials Science-
dc.relation.isPartOfThe 5th Conference of Asian Consortium on Computational Materials Science-
dc.citation.titleThe 5th Conference of Asian Consortium on Computational Materials Science-
dc.citation.conferencePlaceHanoi, Vietnam-
dc.type.rimsCONF-
dc.description.journalClass1-
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