Effect fo the interface carrier density on the device property fo the ZnO thin film transistor fabricated by Atomic Layer Deposition method
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2021-08-03T21:37:11Z | - |
dc.date.available | 2021-08-03T21:37:11Z | - |
dc.date.issued | 20090608 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/61534 | - |
dc.title | Effect fo the interface carrier density on the device property fo the ZnO thin film transistor fabricated by Atomic Layer Deposition method | - |
dc.type | Conference | - |
dc.citation.conferenceName | E-MRS 2009 Spring Meeting | - |
dc.citation.conferencePlace | congress center strasbourg, France | - |
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