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Electrical Properties of Atomic Layer Deposited ZnO Thin Film Transistor with Various Channel Layer Thickness
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-03T22:51:44Z | - |
| dc.date.available | 2021-08-03T22:51:44Z | - |
| dc.date.issued | 2008-10-23 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/63473 | - |
| dc.title | Electrical Properties of Atomic Layer Deposited ZnO Thin Film Transistor with Various Channel Layer Thickness | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 55th AVS International Symposium & Exhibition | - |
| dc.citation.conferencePlace | Boston, MA | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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