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Passivation of Metal-Nanotube interfaces using SiO2/Single-Wall Carbon Nanotube Composites for Toxic Gas sensor Applications

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dc.contributor.author이승백-
dc.date.accessioned2021-08-03T23:22:20Z-
dc.date.available2021-08-03T23:22:20Z-
dc.date.issued2008-08-27-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/64031-
dc.description.abstractIn nanotube based gas sensors, the gas detection characteristics generally depend upon the contact barrier characteristics, between the metal electrode and the nanotube contact, especially for the single-wall nanotube (SWCNT) thin film gas sensors. Gas molecules absorbed at the metal electrode-SWCNT interface caused sensitivity degradation by forming non-ohmic contacts and erosion of the contact metal surface forms barriers at the interface reducing contact reliability. Here, we present a method of utilizing sol-gel based SiO2-SWCNT mixing solution coated on the metal and the SWCNT thin film contact area for enhancement of mechanical, thermal, chemical and humidity stabilities of the metal-SWCNT interface. We dispersed the specific amount of SWCNT into the SiO2 sol-gel solution using ultrasound agitation. Electrophoresis was used to attract the nanotubes in solution to the metal-SWCNT interface leaving the sol-gel to completely encapsulate the contact area. Then, the sample was annealed at 650℃ for 2 minutes for crystallization. We found the SiO2/SWCNT composite film formed on the metal-SWCNT contact improves the mechanical, thermal, chemical and humidity stabilities of contact interface. Also we found the sensing signal from the metal-SWCNT interface passivated sensor was more stable than that of unpassivated one, when they were exposed to toxic gases. The metal-SWCNT interface characteristics depending on mechanical stress, temperature, humidity and some specific chemicals were extensively investigated.-
dc.titlePassivation of Metal-Nanotube interfaces using SiO2/Single-Wall Carbon Nanotube Composites for Toxic Gas sensor Applications-
dc.typeConference-
dc.citation.conferenceNameThe 14th International Symposium on the Physics of Semiconductors and Applications-
dc.citation.conferencePlaceJeju, Korea-
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서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers

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