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Gas sensing properties of MoO3 thin film deposited by chemical vapor transport of MoO3(OH)2
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김영도 | - |
| dc.date.accessioned | 2021-08-03T23:22:51Z | - |
| dc.date.available | 2021-08-03T23:22:51Z | - |
| dc.date.issued | 2008-08-24 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/64073 | - |
| dc.description.abstract | MoO3 thin film is useful for the sensor device due to its sensing properties. In this study, deposition of the MoO2 thin film was successfully accomplished by the chemical vapor transport (CVT) of the volatile MoO3(OH)2 and subsequently, MoO3 thin film was obtained by annealing of the deposited MoO2 at 400oC in O2 atmosphere. The sensing property of the MoO3 thin film at Ar, NH3 atmosphere was investigated by the I-V curves. The sensitivity of NH3 was higher than any other gases. | - |
| dc.title | Gas sensing properties of MoO3 thin film deposited by chemical vapor transport of MoO3(OH)2 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The Fourth Joint Symposium on Electronic Materials | - |
| dc.citation.conferencePlace | Tsukuba, Japan | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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