Physical properties of Co2MnSi for the material of Si-based spin transistors
DC Field | Value | Language |
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dc.contributor.author | 이성재 | - |
dc.date.accessioned | 2021-08-03T23:23:15Z | - |
dc.date.available | 2021-08-03T23:23:15Z | - |
dc.date.created | 2021-06-30 | - |
dc.date.issued | 2008-08-20 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/64106 | - |
dc.description.abstract | Ferromagnetic films of Co2MnSi on SOI wafers with a 40 nm-thick Si layer were prepared using the silicidation technique, which is a compatible process with CMOS (Complementary Metal-Oxide-Semiconductor) fabrication technology involving a deposition of Co-Mn metallic multilayers on a Si layer prior to the rapid thermal annealing process at 650 ℃ for 3 minutes. Physical properties as well as microscopic structures were investigated for the possible applications to Si-based spin transistors, i.e., Das-Datta SFETs (Spin Field-Effect Transistor). High saturated magnetization amounting to 1.6 μB/Co-atom was observed and strong correlations between the magnetic and transport properties were found. | - |
dc.publisher | Korean Vacuum Society | - |
dc.title | Physical properties of Co2MnSi for the material of Si-based spin transistors | - |
dc.type | Conference | - |
dc.contributor.affiliatedAuthor | 이성재 | - |
dc.identifier.bibliographicCitation | Int. Conf. on Microelectronics and Plasma Technology | - |
dc.relation.isPartOf | Int. Conf. on Microelectronics and Plasma Technology | - |
dc.citation.title | Int. Conf. on Microelectronics and Plasma Technology | - |
dc.citation.conferencePlace | Jeju, Korea | - |
dc.type.rims | CONF | - |
dc.description.journalClass | 1 | - |
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