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Effect of Amine Functional Group on Removal Rate Selectivity between Copper and Tantalum-nitride Film in Chemical Mechanical Polishing

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dc.contributor.author백운규-
dc.date.accessioned2021-08-03T23:35:55Z-
dc.date.available2021-08-03T23:35:55Z-
dc.date.issued2008-06-20-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/64416-
dc.titleEffect of Amine Functional Group on Removal Rate Selectivity between Copper and Tantalum-nitride Film in Chemical Mechanical Polishing-
dc.typeConference-
dc.citation.conferenceName한국전기전자재료학회 2008 하계학술대회-
dc.citation.conferencePlace속초 한화리조트-
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서울 공과대학 > 서울 에너지공학과 > 2. Conference Papers

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