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The Effect of Polyacrylamide on Removal Poly Si to SiO2 Selectivity in Poly Si CMP Process for NAND Flash Memory beyond 60nm
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 백운규 | - |
| dc.date.accessioned | 2021-08-03T23:51:37Z | - |
| dc.date.available | 2021-08-03T23:51:37Z | - |
| dc.date.issued | 2008-04-26 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/64959 | - |
| dc.title | The Effect of Polyacrylamide on Removal Poly Si to SiO2 Selectivity in Poly Si CMP Process for NAND Flash Memory beyond 60nm | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2008년 한국세라믹학회 춘계총회 및 연구발표회 | - |
| dc.citation.conferencePlace | 서울대학교 공과대학 | - |
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Collections - 서울 공과대학 > 서울 에너지공학과 > 2. Conference Papers
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Related Researcher
- Paik, Ungyu
- COLLEGE OF ENGINEERING (DEPARTMENT OF ENERGY ENGINEERING)