Field-effect characteristics of transparent and flexible low density single-walled carbon nanotube network filmics of transparent and flexible low density single-walled carbon nanotube network film

Abstract

The fabrication of carbon nano tube(CNT) film based transistor is difficult, because CNTs display either metalic or semiconducting properties. We presented here, a method to fabricate low density single-walled carbon nanotubes(SWCNTs) network films which have low bundle concentration with no catalyst particles and less impurities. We immerged an anodic aluminum oxide(AAO) membrane(diameter is 47mm), which has pores with average diameter 0.02μm, into the well dispersed SWCNTs suspension in a bottle, which was then bath sonicated for 40 minutes at a power of 160W. The suspended CNTs were trapped by AAO membrane pores during the sonication. The density of SWCNTs forming the network was controlled by the density of SWCNT suspension and the sonication time. Scanning electron microscopy(SEM) was used to evaluate the density of SWCNT films. Metal source-drain electrode was deposited by thermal evaporator. We spin coated poly-4-vinylphenole(CPVP) on the source-drain electrodes and SWCNT film and gate electrode was deposited by thermal evaporate method. We transformed to SWCNT films on polyethylene terephthalate (PET) substrate using PDMS stamping method. Before measured the electric properties of the sample, we tried to burn metallic SWCNT bundle for decrease of leakage current using electrical burning. We measured electrical properties of SWCNT film.