MAT type Carbon Nanotube Field-Effect Transistor upon Chemical doping

Abstract

Single-walled carbon nanotubes (SWNTs) are promising for future high performance electronics such as field effect transistors (FETs) owing to their various unique properties including ballistic transport with relatively long mean free paths. Chemical doping is expected to substantially increase the density of free charge carriers and thereby enhance the electrical conductivity. In this work we fabricated n-type and p-type SWNT FET devices upon doping K, I2, and Br2. Typical current-voltage curves were obtained by changing gate field, consequently the charge transfer ability of each device were estimated and compared together. For these experiments, we used "mat SWNT film" rather than an individual SWNT, which is useful in making electronic devices if the mat film shows distinguishable current changes.