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Self-Assembled NiSi2 Nanocrystals For Nanoscale Non-Volatile Memory Application
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이승백 | - |
| dc.date.accessioned | 2021-08-04T01:24:18Z | - |
| dc.date.available | 2021-08-04T01:24:18Z | - |
| dc.date.issued | 2007-06-01 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/67369 | - |
| dc.description.abstract | We investigated the charge storage capability of self-assembled monolayers of NiSi2 nanocrystals embedded in SiO2 layers. The NiSi2 films with thickness of 3 and 5 nm were sputter deposited on oxidized Si substrates. By subjecting the sputtered NiSi2 thin-film to rapid thermal annealing a monolayer of NiSi2 nanocrystals was formed | - |
| dc.title | Self-Assembled NiSi2 Nanocrystals For Nanoscale Non-Volatile Memory Application | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 51th international conference on electron, ion, and photon beam technology and nanofabrication | - |
| dc.citation.conferencePlace | Denver, CO, USA | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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- Lee, Seung Beck
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)