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Capacitance-Voltage characterized of NiSi2 nanocrystal with High-K gate oxide
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이승백 | - |
| dc.date.accessioned | 2021-08-04T01:38:32Z | - |
| dc.date.available | 2021-08-04T01:38:32Z | - |
| dc.date.issued | 2007-04-20 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/67807 | - |
| dc.description.abstract | Capacitance-Voltage characterized of NiSi2 nanocrystal with High-K gate oxide | - |
| dc.title | Capacitance-Voltage characterized of NiSi2 nanocrystal with High-K gate oxide | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2007 한국물리학회 봄 학술발표회 | - |
| dc.citation.conferencePlace | 휘닉스파크 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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Related Researcher
- Lee, Seung Beck
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)