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Shallow pattern generation in poly(methylmethacrylate)(PMMA) using low-energy electron beam

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dc.contributor.author이승백-
dc.date.accessioned2021-08-04T02:30:23Z-
dc.date.available2021-08-04T02:30:23Z-
dc.date.issued2006-10-20-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/69047-
dc.description.abstractLow-energy electron beam lithography has been of great interest to researchers, because it could provide a good solution to improve throughput, and reduce substrate damages. The main issues of low-energy electron beam lithography are the reliability of resist and the developing conditions. In this paper, we have investigated the developed pattern depth profile in poly(methylmethacrylate) (PMMA) using microcolumn electron beam source with an accelerating voltage of 500 eV. The dose latitudes of samples were varied from 10 μC/cm2 to 90 μC/cm2, and the developing time varied from 10 sec to 60 sec. We also varied the concentration of isopropanol(IPA) in DI water for developer(IPA:DI = 1:1 and 3:7). We investigated the depth profiles and the edge roughnesses with atomic force microscope(AFM) and scanning electron microscope(SEM).-
dc.titleShallow pattern generation in poly(methylmethacrylate)(PMMA) using low-energy electron beam-
dc.typeConference-
dc.citation.conferenceName한국물리학회 가을학술논문발표회-
dc.citation.conferencePlace대구 EXCO-
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서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers

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