Fabrication of One-Dimensional Semiconductor GaN Nanowire Devices using Dielectrophoretic Assembly

Abstract

Fabrication of nanowire based electronic devices presents a big challenge, due to their one dimentional nature. Chemical Vapor Deposition produces wafer scale forest of nanowires, with small variation in material characteristics, however, due to their random orientation it is difficult to align one-diemensional(1D) nanowires on to exact position for device integration. For controlled assembly, electrophoresis has been shown to be one of the most effective methods in alignment of 1D nanowires between two metal electrodes. Here, we present device characteristics of 1D GaN nanowires assembled using dielectrophoresis. The fabrication method utilizes the dielectrophoretic interact between an applied ac electric field and the dipole moment of GaN nanowires and solvent. We investigated the alignment charactertistics of 1D GaN nanowires for different ac field frequency and solvent solutions. The aligned 1D GaN nanowires devices showed ohmic I-V characteristics with rapid thermal annealing (RTA) at 400oC. Also, we successfully fabricated cross junction devices by crossing different types of nanowires on cross gapped metal electrodes, and will report on their p-n junction characteristics.