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Thickness Control of Cu-Nanowires by Using Atomic Layer Deposition and Electrodeposition
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 성명모 | - |
| dc.date.accessioned | 2021-08-04T02:50:36Z | - |
| dc.date.available | 2021-08-04T02:50:36Z | - |
| dc.date.issued | 2006-07-25 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/69707 | - |
| dc.description.abstract | We present a novel approach for thickness control of Cu-nanowires by using atomic layer deposition (ALD) of Al2O3 and electrodeposition of Cu with a nanoporous membrane as a template. The Al2O3 thin films were successfully coated only onto the inner-wall of template by ALD at 140℃. The Cu metals were then electrodeposited into the pore of the Al2O3-coated template. The Cu-nanowires were successfully fabricated with ultra-precise control of the Al2O3 wall thickness, so as to inner diameter of the Cu wire. The Cu nanowires have been investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). | - |
| dc.title | Thickness Control of Cu-Nanowires by Using Atomic Layer Deposition and Electrodeposition | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | AVS 6th International conference on Atomic Layer Deposition 2006 | - |
| dc.citation.conferencePlace | 교육문화센터 | - |
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