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Control of the wall Thickness of Cu-Nanowire by using Atomic Layer Deposition
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 성명모 | - |
| dc.date.accessioned | 2021-08-04T02:52:44Z | - |
| dc.date.available | 2021-08-04T02:52:44Z | - |
| dc.date.issued | 2006-06-22 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/69865 | - |
| dc.description.abstract | We have been studied the fabrication of nanowires using atomic layer deposition (ALD) and electrodeposition with a anodic aluminum oxide(AAO) as the template. The Al2O3thin films were formed inside the PC template by using ALD from trimethylaluminum (TMA) and H2O at 405K. Due to the excellent coatings of the ALD process, the wall thickness of the oxide nanotubes, and thus the inner diameter of the tubes, could be controlled. The Cu nanowires were deposited by using electrodeposition into Al2O3 nanotubes. The Cu nanowires have been investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). | - |
| dc.title | Control of the wall Thickness of Cu-Nanowire by using Atomic Layer Deposition | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제 17회 Molecular Electronics and Devices | - |
| dc.citation.conferencePlace | 한양대학교 | - |
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