Cited 0 time in
Fabrication of Cu-Nanowires by using Atomic Layer Deposition with Control of the Wall Thickness
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 성명모 | - |
| dc.date.accessioned | 2021-08-04T03:24:04Z | - |
| dc.date.available | 2021-08-04T03:24:04Z | - |
| dc.date.issued | 2006-04-20 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/70476 | - |
| dc.description.abstract | We have been studied the fabrication of nanowires using atomic layer deposition (ALD) and electrodeposition with a nanoporous polycarbonate (PC) membrane as the template. The OTS-SAMs layer used as the passivation layer was deposited onto both sides of the PC template by contact printing. The Al2O3 thin films were formed inside the PC template by using ALD from trimethylaluminum (TMA) and H2O at 405K. Due to the excellent coatings of the ALD process, the wall thickness of the oxide nanotubes, and thus the inner diameter of the tubes, could be controlled. The Cu nanowires were deposited by using electrodeposition into Al2O3 nanotubes. The Cu-nanowires have been investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). | - |
| dc.title | Fabrication of Cu-Nanowires by using Atomic Layer Deposition with Control of the Wall Thickness | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제 97회 대한화학회 | - |
| dc.citation.conferencePlace | KINTEX | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1366
COPYRIGHT © 2024 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.
