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Electrical Properties Of Pentacene-Based Field-Effect Transistor With A Dielectric Layer Formed By Obliquely Evaporated Silicon Dioxide
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김재훈 | - |
| dc.date.accessioned | 2021-08-04T03:33:13Z | - |
| dc.date.available | 2021-08-04T03:33:13Z | - |
| dc.date.issued | 2006-04-17 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/70541 | - |
| dc.title | Electrical Properties Of Pentacene-Based Field-Effect Transistor With A Dielectric Layer Formed By Obliquely Evaporated Silicon Dioxide | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2006 Materials Research Society Spring Meeting | - |
| dc.citation.conferencePlace | San Francisco, USA | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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- Kim, Jae Hoon
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)