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Dependence of Forming-free GeSe based Conductive-Bridging Random-Access-Memory Characteristics on Thicknesses and Chemical Composition Ratio of GeSex
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-07-30T08:28:08Z | - |
| dc.date.available | 2021-07-30T08:28:08Z | - |
| dc.date.issued | 2020-11-05 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/7065 | - |
| dc.title | Dependence of Forming-free GeSe based Conductive-Bridging Random-Access-Memory Characteristics on Thicknesses and Chemical Composition Ratio of GeSex | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2020 KPS fall meeting | - |
| dc.citation.conferencePlace | On-line | - |
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