단일벽 탄소나노튜브 박막 트랜지스터에 대한 전기화학적 게이팅 특성조사

Abstract

We have investigated the electrochemical gating characteristics of hole transport in aligned single-walled carbon nanotube (SWCNT) network thin film transistors(TFT). SWCNT thin films were aligned between source and drain electrodes using dielectrophoresis. Electric field applied between the 1 mM NaCl solution and the SWCNT actively controlled the hole transport in the p-type TFT. This may be due to the applied electric field polarizing the ions creating an electrical double layer on the SWCNT surface, which actively raises or lowers the p-type thin film`s Fermi level. Compared to the transfer characteristics obtained using the substrate as a backgate, electrochemical gating shows much enhanced capacitive coupling between the gate and the SWCNT and much increased transconductance characteristics.